TranSiC was founded in 2005 as a spin-off company from the Royal Institute of Technology in Stockholm by entrepreneurs Bo Hammarlund, Professor Mikael Östling and Ph.D. Martin Domeij.

Sweden has a long history of investing in Silicon Carbide research, which has resulted in the build-up of considerable knowledge and experience of the whole chain: from bulk material growth, via epitaxy, to complete device design and manufacturing.

TranSiC has successfully been able to tap into this pool of expertise to develop Bipolar Junction power Transistors (BJT’s) manufactured in the semiconductor material of silicon carbide.

At TranSiC, there is a profound understanding of how to refine the production process in order to manufacture power transistors that meet superior performances in terms of high efficiency, high temperature operation, high level of robustness and compactness.

There are many industries that will profit from using SiC BJT power transistors that offer new levels of performance. Some of these include the Automotive Industry in HEV (Hybrid Electrical Vehicle) and EV (Electric Vehicle) applications, the Oil & Gas industry, the Avionics industry as well as demanding applications throughout the whole field of switched power. TranSiC’s high efficiency power transistors will prove valuable in the green energy sector, where they can bring higher efficiency in wind power generators and photovoltaic inverters.

In conclusion, TranSiC sees many interesting opportunities that manifest because of the inherently superior performance of SiC BJTs over conventional silicon power transistor solutions of today.