Application Notes

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TSC-TR001 Proton and 12C Radiation hardness

This report shows very good first results within the field of the radiation hardness of Transic’s silicon carbide BJT’s. We have examined the effect of MeV ion irradiation on electrical device characteristics of BitSiC transistors in order to elucidate the device tolerance for highly ionizing particles.

TSC-TR002 SPICE models

This report includes spice models for the BitSiC transistors including modeling of the temperature depandant properties of the transistors. The models can be used with most Spice based circuit simulators, including the free downloadable LTSpice.

TSC-TR0003 Drive circuit and switching

In order to fully benefit from using SiC BJT's, it is important to use a suitable drive circuit and that is the topic of this technical note. The drive circuit is described for a 6 A 1200 V SiC BJT. The results and conclusions are, however, scalable to higher currents and applicable also to other SiC BJTs.