Compact power electronic
systems require power devices
with
low power losses and high temperature capability
TranSiC develops bipolar junction transistors (BJT) in silicon carbide (SiC) for near future compact power electronic systems
Silicon Carbide is a semiconductor with wide bandgap, 3.2 eV. Compared to traditional Silicon, bandgap 1.1 eV, this gives our BitSiC an outstanding performance in terms of operating at very high temperatures. In addition to this Silicon Carbide can handle 5 times higher electrical fields , 2.2 MV/cm, than Silicon.
SiC BJT target specifications:
Room temperature VCESAT less than 1
V (at RT)
1200 V and 6 - 12 A device rating
TO220 device package capable of 175
ºC or single
die capable of 225 ºC
Storage time delay less than 100 ns
Rise- and fall-times less than 50 ns and nearly temperature
independent switching
Wide RBSOA, short-circuit capability and excellent immunity
to cosmic rays
SiC BJT fabrication
Fabrication of BJT chips is performed in a four inch processline in the
Electrum
Laboratory in